Nanostructured materials are extremely fascinating. At the nanoscale, materials exhibit new properties and behaviors, which can be exploited for a wide range of applications in almost every branch of technology. For this, however, it is crucial to achieve control over the growth process.
This image represents the different growth steps of GaAs nanoridges by metal–organic vapor-phase epitaxy (MOVPE). Nicholas Morgan and the group of Anna Fontcuberta-i-Morral at EPFL investigated the process and developed a kinetic model to accurately describe the evolution of the nanoridges morphology at the different stages. This allows a high level of control over the production of nanoridges with different features and highlights the advantages of MOVPE compared to other growth techniques.
Find out more at: https://pubs.acs.org/doi/full/10.1021/acs.cgd.3c00316
