First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 {\deg}C. (arXiv:2105.01721v1 [physics.app-ph]) http://arxiv.org/abs/2105.01721
QOTO: Question Others to Teach Ourselves An inclusive, Academic Freedom, instance All cultures welcome. Hate speech and harassment strictly forbidden.