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Non-destructive Depth-Resolved Characterization of Residual Strain Fields in High Electron Mobility Transistors using Differential Aperture X-ray Microscopy. (arXiv:2207.05789v1 [physics.app-ph]) http://arxiv.org/abs/2207.05789
Non-destructive Depth-Resolved Characterization of Residual Strain Fields in High Electron Mobility Transistors using Differential Aperture X-ray Microscopy. (arXiv:2207.05789v1 [physics.app-ph]) http://arxiv.org/abs/2207.05789